Datasheet > 2SA1832

2SA1832

更新时间： 2024-11-16 14:55:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		光电二极管晶体管
页数	文件大小	规格书
4页	1033K
描述
SOT-523

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中文翻译

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数据手册

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2SA1832 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-523 Plastic-Encapsulate Transistors

SOT-523

2SA1832 TRANSISTOR (PNP)

FEATURES

1. BASE

High voltage and high current

2. EMITTER

3. COLLECTOR

Excellent h_FElinearity

Complementary to 2SC4738

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-50

Unit

Equivalent Circuit

Collector-Base Voltage

Collector-Emitter Voltage

-50

Emitter-Base Voltage

-5

Collector Current -Continuous

Total Device Dissipation

-150

℃/W

℃

P_D

100

R_θJA

Thermal Resistance Junction to Ambient

Operation Junction and Storage Temperature Range

125

T_J, T_stg

-55 to +125

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_CBO

V_CEO*

V_EBO

I_CBO

I_EBO

I_C=-100μA,I_E=0

-50

-5

I_C=-1mA,I_B=0

I_E=-100μA,I_C=0

V_CB=-50V,I_E=0

-100

400

Emitter cut-off current

V_EB=-5V, I_C=0

DC current gain

h_FE

V_CE=-6V,I_C=-2mA

I_C=-100mA,I_B=-10mA

V_CE=-10V,I_C=-1mA

V_CB=-10V,I_E=0,f =1MHz

120

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

-0.3

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

120-240

200-400

Range

Marking

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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