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2SA1832 PDF预览

2SA1832

更新时间: 2024-11-15 07:29:47
品牌 Logo 应用领域
WEITRON 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
3页 534K
描述
PNP TRANSISTOR

2SA1832 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.4
Base Number Matches:1

2SA1832 数据手册

 浏览型号2SA1832的Datasheet PDF文件第2页浏览型号2SA1832的Datasheet PDF文件第3页 
2SA1832  
PNP TRANSISTOR  
3
P b  
Lead(Pb)-Free  
1
2
FEATURES:  
* High voltage and high current  
* Excellent hFE linearity  
* Complementary to 2SC4738  
SOT-523(SC-75)  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Units  
V
Value  
-50  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-50  
V
-5  
V
Collector Current Continuous  
Total Device Dissipation  
mA  
mW  
/W  
-150  
PD  
100  
RθJA  
TJ  
Thermal Resistance Junction to Ambient  
Junction Temperature  
125  
-55 to +125  
Tstg  
-55 to +125  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
VCBO  
VCEO*  
VEBO  
ICBO  
IEBO  
IC=-100μA,IE=0  
-50  
-50  
-5  
V
V
IC=-1mA,IB=0  
IE=-100μA,IC=0  
V
VCB=-50V,IE=0  
-100  
-100  
400  
nA  
nA  
Emitter cut-off current  
VEB =-5V, IC=0  
DC current gain  
hFE  
VCE=-6V,IC=-2mA  
IC=-100mA,IB=-10mA  
VCE=-10V,IC=-1mA  
VCB=-10V,IE=0,f =1MHz  
120  
80  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
-0.3  
V
MHz  
pF  
Collector output capacitance  
Cob  
4
7
CLASSIFICATION OF hFE  
Rank  
Y
GR  
120-240  
SY  
200-400  
SG  
Range  
Marking  
WEITRON  
http://www.weitron.com.tw  
1/3  
30-Jan-08  

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