Datasheet > 2SA1812

2SA1812

更新时间： 2024-06-27 12:11:56

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1134K
描述
PNP Transistor

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中文翻译

获取价格

数据手册

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2SA1812 数据手册

SMD Type

Transistors

PNP Transistors

2SA1812

1.70 0.1

■ Features

● High breakdown voltage, BVCEO=-400V.

● High switching speed, typically tf :1us at I

●High-voltage Switching Transistor

C =-100mA.

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-400

-7

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Current - Pulse

-0.5

-1

0.5

Collector Power Dissipation

℃

Junction Temperature

150

Storage Temperature range

stg

-55 to 150

Note.1: When mounted on a 40X40X0.7mm ceramic board.

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-400

-7

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA， I =0

= -100μA， I =0

CB= -400 V , I =0

EB= -6V , I =0

E=0

CBO

EBO

-10

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-100 mA, I

=-10mA

=-100 mA, I

-1.2

270

stg

^CE= -5V, I

C= -50mA

Turn-on time

0.6

2.7

= -100mA, RL= 1.5kΩ

B1= -IB2=-10mA

CC= 0 to -150V

Storage time

Fall time

Collector output capacitance

Transition frequency

^CB= -10V, I

= 0,f=1MHz

^CE= -5V, I = 50mA,f=5MHz

MHz

■ Marking

Marking

AJ*

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中文翻译

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与2SA1812相关器件

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2SA1812T100/NP	ROHM	获取价格	Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
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2SA1812T100/PQ	ROHM	获取价格	Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SA1812T100N	ROHM	获取价格	500mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1812T100P	ROHM	获取价格	500mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPT3, 3 PIN