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2SA1729-S PDF预览

2SA1729-S

更新时间: 2024-02-05 22:15:06
品牌 Logo 应用领域
科信 - KEXIN 开关晶体管
页数 文件大小 规格书
3页 871K
描述
PNP Transistors

2SA1729-S 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
风险等级:5.83外壳连接:COLLECTOR
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
功耗环境最大值:1.3 W认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

2SA1729-S 数据手册

 浏览型号2SA1729-S的Datasheet PDF文件第2页浏览型号2SA1729-S的Datasheet PDF文件第3页 
SMD Type  
Transistors  
PNP Transistors  
2SA1729  
1.70 0.1  
Features  
Large current capacity.  
Low collector-to-emitter saturation voltage.  
0.42 0.1  
0.46 0.1  
Fast switching speed.  
Small-sized package.  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Symbol  
Rating  
Unit  
Collector - Base Voltage  
VCBO  
VCEO  
VEBO  
-50  
-40  
V
Collector - Emitter Voltage  
Emitter - Base Voltage  
-5  
Collector Current - Continuous  
Collector Current -Pulse  
I
C
-1.5  
A
I
Cp  
-3  
Collector Power Dissipation (Note.1)  
Junction Temperature  
P
C
1.3  
W
T
J
150  
Storage Temperature range  
Tstg  
-55 to 150  
Note.1: Mounted on ceramic board (250mm 2 X 0.8mm)  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
-50  
-40  
-5  
Ic= -100 uAI  
Ic= -1 mARBE= ∞  
= -100 uAI =0  
CB= -40 V , I =0  
EB= -3V , I =0  
E=0  
I
E
C
I
CBO  
EBO  
V
V
E
-1  
uA  
V
I
C
-1  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=-800 mA, I  
B
B
=-40 mA  
=-40 mA  
-0.3  
-0.9  
-0.8  
-1.3  
280  
V
C
=-800 mA, I  
h
FE(1)  
FE(2)  
V
V
CE= -2V, I  
CE= -2V, I  
C
= -100 mA  
= -1.5 A  
70  
25  
DC current gain  
h
C
Turn-on Time  
t
on  
stg  
off  
50  
120  
150  
18  
100  
220  
300  
See specified Test Circuit  
ns  
Storage time  
t
Tutn-off time  
t
Collector output capacitance  
Transition frequency  
C
ob  
T
V
V
CB= -10V, f=1MHz  
pF  
f
CE= -2V, I  
C= -100 mA  
300  
MHz  
Classification of hfe(1)  
Type  
Range  
Marking  
2SA1729-Q  
70-140  
2SA1729-R  
100-200  
AGR  
2SA1729-S  
140-280  
AGS  
AGQ  
1
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