Datasheet > 2SA1700D(TP-FA)

2SA1700D(TP-FA)

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	36K
描述
TRANSISTOR,BJT,PNP,400V V(BR)CEO,200MA I(C),TO-252VAR

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2SA1700D(TP-FA) 数据手册

Ordering number:ENN2974A

PNP Epitaxial Planar Silicon Transistors

2SA1700

High-Voltage Driver Applications

Features

Package Dimensions

unit:mm

· High breakdown voltage.

· Adoption of MBIT process.

2045B

· Excellent h linearity.

[2SA1700]

6.5

2.3

5.0

0.5

0.85

0.7

1.2

0.6

0.5

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

2.3

unit:mm

2044B

[2SA1700]

6.5

2.3

5.0

0.5

0.85

0.6

1.2

0 to 0.2

1 : Base

2 : Collector

3 : Emitter

2.3

4 : Collector

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O3003TN (KT)/8219MO/6139MO, TS No.2974-1/4

12 3 4

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