Datasheet > 2SA1700D(TO-252)

2SA1700D(TO-252)

更新时间： 2024-02-27 07:20:54

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
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描述
Transistor

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技术参数
数据手册

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2SA1700D(TO-252) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SA1700D(TO-252) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-252 Plastic-Encapsulate Transistors

2SA1700 TRANSISTOR (PNP)

TO-252

FEATURES

High Breakdown Voltage

Adoption of MBIT Process

Excellent h_FELinearity

1.BASE

2.COLLECTOR

3.EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-400

-5

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

-0.2

P_C

℃

T_J

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

-400

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)CBOI_C=-10µA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-10µA,I_C=0

µA

I_CBO

I_EBO

h_FE

V_CB=-300V,I_E=0

-0.1

200

-0.8

-1

V_EB=-4V,I_C=0

DC current gain

V_CE=-10V,I_C=-50mA

I_C=-50mA,I_B=-5mA

V_CE=-30V,I_C=-10mA

V_CB=-30V,f=1MHz

Collector-emitter saturation voltage

Base- emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

MHz

µS

Output Capacitance

C_ob

Reverse Transfer Capacitance

Turn-on Time

C_re

t_on

0.25

_CC=-150V,I_B1=I_B2=-5mA,R_L=3KΩ

Turn-off Time

t_off

µS

CLASSIFICATION OF h_FE

Rank

60-120

100-200

Range

A,Jun,2011

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