Datasheet > 2SA1700

2SA1700

更新时间： 2024-09-26 12:54:35

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	132K
描述
TRANSISTOR (NPN)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SA1700 数据手册

RoHS

2SA1700

TO-251

2SA1700 TRANSISTOR (NPN)

FEATURES

Power dissipation

1. BASE

2. COLLECTOR

3. EMITTER

P_CM

: 1

W (Tamb=25℃)

Collector current

I_CM

: -200

Collector-base voltage

_(BR)CBO: -400

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-10µA, I_E=0

Ic=-1mA, I_B=0

MIN

-400

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-10µA, I_C=0

µA

V_CB=-300V, I_E=0

-0.1

200

-0.6

-1

I_EBO

Emitter cut-off current

V_EB=-4V, I_C=0

h_FE(1)

DC current gain

V_CE=-10V, I_C=-50mA

V_CE(sat)

V_BE(sat)

f_T

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=-50mA, I_B=-5mA

V_CE=-30V, I_C=-10mA

MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

60-120

100-200

WEJ ELECTRONIC CO.,LTD

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

下载PDF

与2SA1700相关器件

型号	品牌	获取价格	描述	数据表
2SA1700_12	UTC	获取价格	HIGH VOLTAGE DRIVER APPLICATION
2SA1700_2	UTC	获取价格	HIGH VOLTAGE DRIVER APPLICATION
2SA1700D	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 400V V(BR)CEO \| 200MA I(C) \| TO-252
2SA1700D(TO-251)	CJ	获取价格	Transistor
2SA1700D(TO-251)	UTC	获取价格	Transistor
2SA1700D(TO-252)	UTC	获取价格	Transistor
2SA1700D(TO-252)	CJ	获取价格	Transistor
2SA1700D(TP-FA)	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,400V V(BR)CEO,200MA I(C),TO-252VAR
2SA1700E	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,400V V(BR)CEO,200MA I(C),TO-252
2SA1700E(TO-251)	CJ	获取价格	Transistor