Datasheet > 2SA1693O

2SA1693O

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
三垦 - SANKEN		/
页数	文件大小	规格书
1页	27K
描述
Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT100, TO-3P, 3 PIN

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数据手册

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2SA1693O 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.83

2SA1693O 数据手册

2 S A1 6 9 3

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466)

Application : Audio and General Purpose

■Absolute maximum ratings

■Electrical Characteristics

External Dimensions MT-100(TO3P)

(Ta=25°C)

Symbol

Ratings

–10max

–80min

50min

Symbol

Ratings

Conditions

Unit

µA

Unit

±0.2

4.8

±0.4

15.6

I^CBO

V^CBO

VCEO

VEBO

V^CB=–80V

–80

±0.1

2.0

9.6

IEBO

V^EB=–6V

–80

V(BR)CEO

hFE

I^C=–50mA

–6

±0.1

ø3.2

V^CE=–4V, IC=–2A

I^C=–2A, IB=–0.2A

V^CE=–12V, IE=0.5A

V^CB=–10V, f=1MHz

–6

–3

VCE(sat)

–1.5max

20typ

MHz

60(Tc=25°C)

150

°C

COB

150typ

Tstg

+0.2

-0.1

+0.2

-0.1

–55 +150

hFE Rank O(50 100), P(70 140), Y(90 180)

1.05

0.65

1.4

±0.1

5.45

■Typical Switching Characteristics (Common Emitter)

V^CC

(V)

R^L

(Ω)

I^C

(A)

VBB1

(V)

V^BB2

(V)

I^B1

(A)

I^B2

(A)

ton

(µs)

tstg

(µs)

Weight : Approx 6.0g

a. Part No.

–30

–3

–10

–0.3

0.3

0.18typ

1.10typ 0.21typ

b. Lot No.

–

I^CV^CECharacteristics (Typical)

VCE(sat) IB Characteristics (Typical)

I^CV^BETemperature Characteristics (Typical)

(VCE=–4V)

–6

–4

–2

–3

–4

–2

–50mA

–30mA

–20mA

–1

I^B=–10mA

IC=–6A

–4A

–2A

–1

–2

–3

–4

–0.5

–1.0

–1.5

–1

–2

Collector-Emitter Voltage VCE(V)

Base Current I^B(A)

Base-Emittor Voltage V^BE(V)

–

^j-at Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=–4V)

300

125˚C

25˚C

Typ

–30˚C

100

0.5

0.3

–0.02

–0.1

–0.5

–1

–5 –6

100

Time t(ms)

1000 2000

–0.02

–0.1

–0.5

–1

–5 –6

Collector Current I^C(A)

Collector Current IC(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=–12V)

–20

–10

–5

Typ

100ms

–1

–0.5

Without Heatsink

Natural Cooling

Without Heatsink

3.5

0.02

–0.1

0.05 0.1

0.5

5 6

–5

–10

–50

–100

100

125

150

Collector-Emitter Voltage V^CE(V)

Emitter Current I^E(A)

Ambient Temperature Ta(˚C)

中文翻译

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与2SA1693O相关器件

型号	品牌	获取价格	描述	数据表
2SA1693P	SANKEN	获取价格	Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SA1693Y	ALLEGRO	获取价格	Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SA1693Y	SANKEN	获取价格	Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SA1694	ISC	获取价格	Silicon PNP Power Transistor
2SA1694	SANKEN	获取价格	Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
2SA1694	THINKISEMI	获取价格	Silicon PNP Epitaxial Planar Transistor
2SA1694	UTC	获取价格	SILICON PNP EPITAXIAL PLANAR TRANSISTOR
2SA1694	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SA1694	NJSEMI	获取价格	Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3P
2SA1694_07	SANKEN	获取价格	Silicon PNP Epitaxial Planar Transistor

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