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2SA1673_07

更新时间: 2024-01-19 08:10:27
品牌 Logo 应用领域
三垦 - SANKEN 晶体晶体管
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描述
Silicon PNP Epitaxial Planar Transistor

2SA1673_07 数据手册

  
2 S A1 6 7 3  
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388)  
Application : Audio and General Purpose  
External Dimensions FM100(TO3PF)  
(Ta=25°C)  
Absolute maximum ratings  
Electrical Characteristics  
(Ta=25°C)  
Ratings  
Ratings  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Unit  
Symbol  
Conditions  
Unit  
±0.2  
5.5  
±0.2  
15.6  
±0.2  
3.45  
–180  
ICBO  
–10max  
–10max  
–180min  
50min  
µA  
µA  
V
VCB=180V  
V
–180  
IEBO  
VEB=6V  
V
–6  
V(BR)CEO  
hFE  
IC=50mA  
V
±0.2  
ø3.3  
VCE=4V, IC=3A  
IC=5A, IB=0.5A  
VCE=12V, IE=0.5A  
VCB=10V, f=1MHz  
–15  
–4  
A
a
b
–2.0max  
20typ  
IB  
VCE(sat)  
fT  
V
MHz  
pF  
A
PC  
85(Tc=25°C)  
150  
W
°C  
°C  
1.75  
2.15  
0.8  
500typ  
Tj  
COB  
Tstg  
to  
–55 +150  
to  
to  
to  
hFE Rank O(50 100), P(70 140), Y(90 180)  
+0.2  
-0.1  
1.05  
+0.2  
±0.1  
1.5  
±0.1  
0.65  
-0.1  
5.45  
5.45  
1.5  
3.35  
Typical Switching Characteristics (Common Emitter)  
4.4  
C
VBB2  
(V)  
IB1  
(A)  
ton  
(µs)  
VCC  
(V)  
RL  
()  
IC  
(A)  
VBB1  
(V)  
IB2  
(A)  
tstg  
(µs)  
tf  
(µs)  
Weight : Approx 6.5g  
a. Part No.  
b. Lot No.  
B
E
5
–1  
0.6typ  
–40  
4
–10  
–10  
1
0.9typ  
0.2typ  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=–4V)  
–15  
–15  
–10  
– 3  
–10  
–5  
0
–2  
–1  
–50mA  
–5  
IC=–10A  
IB=–20mA  
–5A  
0
0
0
–1  
–2  
–3  
–4  
0
–0.5  
–1.0  
–1.5  
–2.0  
0
–1  
–2  
Collector-Emitter Voltage VCE(V)  
Base Current IB(A)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
(VCE=–4V)  
(VCE=–4V)  
3
200  
300  
125˚C  
25˚C  
Typ  
100  
1
–30˚C  
100  
50  
0.5  
50  
20  
–0.02  
10  
–0.02  
0.1  
–0.1  
–0.5 –1  
–5 –10 –15  
–0.1  
–0.5 –1  
Collector Current IC(A)  
–5 –10 –15  
1
10  
100  
Time t(ms)  
1000 2000  
Collector Current IC(A)  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=–12V)  
–40  
30  
20  
100  
80  
–10  
–5  
Typ  
60  
–2  
–1  
40  
10  
–0.5  
Without Heatsink  
Natural Cooling  
20  
–0.2  
–0.1  
Without Heatsink  
3.5  
0
0
0.02  
–3  
–10  
–100  
–200  
0.1  
1
10  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
Emitter Current IE(A)  
26  

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