Datasheet > 2SA1668U

2SA1668U

更新时间： 2023-12-06 20:07:33

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
3页	408K
描述
功率三极管

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2SA1668U 数据手册

2SA1668U

PNP Silicon Epitaxial Planar Transistor

Features

• High Voltage

• High Current

• High Transition Frequency

• Wide Area of Safe Operation.

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulsed

-I_CM

0.5

1 ¹⁾

Power Dissipation

P_D

Junction Temperature

T_j

150

℃

Storage Temperature Range

T_stg

- 55 to + 150

¹⁾Package mounted on ceramic substrate (250 mm²x 0.8t).

Characteristics at T_a= 25℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 2 V, -I_C= 50 mA

Current Gain Group O

h_FE

100

120

200

at -V_CE= 2 V, -I_C= 1 A

Collector Base Cutoff Current

at -V_CB= 50 V

-I_CBO

-I_EBO

100

Emitter Base Cutoff Current

at -V_EB= 4 V

Collector Emitter Breakdown Voltage

at -I_C= 1 mA

-V_(BR)CEO

-V_CE(sat)

-V_BE(sat)

f_T

Collector Emitter Saturation Voltage

at -I_C= 500 mA, -I_B= 50 mA

0.7

1.2

Base Emitter Saturation Voltage

at -I_C= 500 mA, -I_B= 50 mA

Transition Frequency

at -V_CE= 10 V, -I_C= 50 mA

150

MHz

Collector Output Capacitance

at -V_CB= 10 V, f = 1 MHz

C_ob

Dated: 08/10/2018 Rev: 01

12 3

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