Datasheet > 2SA1664_15

2SA1664_15

更新时间： 2024-09-26 01:14:15

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描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1664_15 数据手册

SMD Type

Transistors

PNP Transistors

2SA1664

■ Features

1.70 0.1

● Small Flat Package

● High Current Application

● High Transition Frequency

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

VCEO

VEBO

-35

-30

Collector - Emitter Voltage

Emitter - Base Voltage

-5

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction to Ambient

Junction Temperature

-800

500

℃/W

RθJA

250

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

-35

-30

-5

Ic= -1mA， IE=0

Ic= -10 mA，I

= -1mA， I

C=0

CBO

EBO

CB= -35 V , I

-0.1

-0.7

-1.2

-0.8

320

EB= -5V , IC=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-500 mA, I

=-20 mA

=-500 mA, I

CE= -1V, I

C= -10mA

C= -100mA

C= -700mA

-0.5

100

FE(1)

FE(2)

DC current gain

Collector output capacitance

Transition frequency

Cob

CB= -10V,I

CE= -5V, I

=0, f=1MHz

C= -10mA

120

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SA1664-O

100-200

2SA1664-Y

160-320

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