Datasheet > 2SA1662

2SA1662

更新时间： 2023-12-06 20:08:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	1146K
描述
SOT-89-3L

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2SA1662 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

2SA1662 TRANSISTOR (PNP)

SOT-89-3L

1. BASE

FEATURES

Complementary to KTC4374

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

MARKING

F O

F Y

Solid dot = Green molding compound device.

B C E

Symbol

Parameter

Value

-80

-5

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

-0.4

0.5

P_C

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

-80

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-1mA,I_E=0

V_(BR)CEOI_C=-10mA,I_B=0

V_(BR)EBOI_E=-1mA,I_C=0

I_CBO

I_EBO

V_CB=-80V,I_E=0

V_EB=-5V,I_C=0

-0.1

μA

Emitter cut-off current

-0.1

240

h_FE(1)

h_FE(2)

V_CE=-2V,I_C=-50mA

V_CE=-2V,I_C=-200mA

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

f_T

I_C=-200mA,I_B=-20mA

V_CE=-2V,I_C=-5mA

-0.4

-0.8

-0.55

Transition frequency

V_CE=-10V,I_C=-10mA

V_CB=-10V,I_E=0,f=1MHz

120

MHz

Collector output capacitance

CLASSIFICATION OF h_FE(1)

Rank

C_ob

70-140

120-240

Range

Marking

www.jscj-elec.com

Rev. - 2.2

12 3

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