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2SA1647-L PDF预览

2SA1647-L

更新时间: 2024-11-20 21:22:19
品牌 Logo 应用领域
日电电子 - NEC 开关晶体管
页数 文件大小 规格书
5页 161K
描述
5000mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA, MP-3, 3 PIN

2SA1647-L 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TO-251AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
风险等级:5.43外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):150
JEDEC-95代码:TO-251AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):90 MHz最大关闭时间(toff):1900 ns
最大开启时间(吨):300 nsBase Number Matches:1

2SA1647-L 数据手册

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DATA SHEET  
SILICON POWER TRANSISTOR  
2SA1647,1647-Z  
PNP SILICON EPITAXIAL TRANSISTOR  
FOR HIGH-SPEED SWITCHING  
PACKAGE DRAWINGS (Unit: mm)  
The 2SA1647 is a mold power transistor developed for high-  
speed switching and features a very low collector-to-emitter  
saturation voltage.  
2.3 0.2  
0.5 0.1  
6.5 0.2  
5.0 0.2  
4
This transistor is ideal for use in switching regulators, DC/DC  
converters, motor drivers, solenoid drivers, and other low-voltage  
power supply devices, as well as for high-current switching.  
1
2
3
FEATURES  
• Available for high-current control in small dimension  
• Z type is a lead processed product and is deal for mounting a  
hybrid IC.  
1.1 0.2  
0.5 +00..12  
0.5 +00..21  
• Low collector saturation voltage:  
VCE(sat)1 = 0.3 V MAX. (IC = 3.0 A)  
• Fast switching speed:  
2.3 2.3  
tf = 0.4 µs MAX. (IC = 3.0 A)  
• High DC current gain and excellent linearity  
TO-251 (MP-3)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
6.5 0.2  
5.0 0.2  
2.3 0.2  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Base to emitter voltage  
Collector current (DC)  
Symbol  
VCBO  
Ratings  
150  
Unit  
V
0.5 0.1  
4
VCEO  
100  
V
VEBO  
7.0  
V
1
2
3
IC(DC)  
5.0  
A
0.9  
0.8  
MAX. MAX.  
1.1 0.2  
Note 1  
Collector current (pulse)  
Base current (DC)  
IC(pulse)  
IB(DC)  
PT  
10  
A
2.3 2.3  
0.8  
2.5  
A
Total power dissipation (Tc = 25°C)  
Total power dissipation (TA = 25°C)  
Junction temperature  
18  
W
W
°C  
°C  
TO-252 (MP-3Z)  
PT  
1.0Note 2, 2.0Note 3  
Tj  
150  
ELECTRODE CONNECTION  
Storage temperature  
Tstg  
55 to +150  
1. Base  
2. Collector  
3. Emitter  
Notes 1. PW 10 ms, Duty Cycle 50%  
2. Printing board mounted  
3. 7.5 mm2 × 0.7 mm ceramic board mounted  
4. Collector Fin  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D14839EJ4V0DS00 (4th edition)  
Date Published August 2004 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
c
2002  

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