Datasheet > 2SA1646M-Z-AZ

2SA1646M-Z-AZ

更新时间： 2024-11-11 20:10:51

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
6页	212K
描述
TRANSISTOR,BJT,PNP,100V V(BR)CEO,10A I(C),TO-263ABVAR

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中文翻译

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技术参数
数据手册

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2SA1646M-Z-AZ 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	10 A	配置：	Single
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	40 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SA1646M-Z-AZ 数据手册

Preliminary Data Sheet

2SA1646,2SA1646-Z

Silicon Power Transistor

Description

R07DS0048EJ0200

Rev.2.00

Jul 01, 2010

The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-to-

emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,

solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.

Features

•

Fast switching speed

Low collector-to-emitter saturation voltage:

⎯ V_CE(sat)= −0.3 V MAX. @I_C= −6 A

Absolute Maximum Ratings (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V_CBO

Conditions

Ratings

−150

−100

−7.0

−10

−20

Unit

V_CEO

V_EBO

I_D(DC)

I_C(pulse)

I_B(DC)

P_T

Collector current

PW ≤ 300 μs, duty cycle ≤ 10%

Base current

−6.0

Total power dissipation

Junction temperature

Storage temperature

Tc = 25°C

Ta = 25°C

°C

P_T

1.5

T_j

150

T_stg

−55 to +150

Package Drawing (Unit: mm)

Electrode Connection

R07DS0048EJ0200 Rev.2.00

Jul 01, 2010

Page 1 of 4

12 3 4 5 6

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与2SA1646M-Z-AZ相关器件

型号	品牌	获取价格	描述	数据表
2SA1646M-Z-E1	RENESAS	获取价格	2SA1646M-Z-E1
2SA1646M-Z-E1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,100V V(BR)CEO,10A I(C),TO-263ABVAR
2SA1646M-Z-E2-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,100V V(BR)CEO,10A I(C),TO-263ABVAR
2SA1646-Z	NEC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SA1646-Z	RENESAS	获取价格	Silicon Power Transistor
2SA1646-Z-AZ	NEC	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SA1646-Z-E1	RENESAS	获取价格	2SA1646-Z-E1
2SA1646-ZK	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 10A I(C) \| TO-263AB
2SA1646-ZK-AZ	RENESAS	获取价格	暂无描述
2SA1646-ZL	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 10A I(C) \| TO-263AB