Datasheet > 2SA1612

2SA1612

更新时间： 2024-09-26 06:23:35

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	46K
描述
PNP Silicon Epitaxial Transistor

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中文翻译

获取价格

数据手册

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2SA1612 数据手册

SMD Type

Transistors

PNP Silicon Epitaxial Transistor

2SA1612

Features

High DC current gain

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-120

Unit

-120

-5

-50

Total power dissipation

Junction temperature

P^T

150

T^j

150

Storage temperature range

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I^CBO

Testconditons

Min

Typ

Max

-50

Unit

VCB = -120V, IE=0

I^EBO

VEB = -5V, IC=0

-50

V^CE= -6V , IC = -1mA

V^CE= -6V , IC = -0.1mA *

135

100

500

900

DC current gain

h^FE

Collector-emitter saturation voltage *

Base-emitter voltage

V^CE(sat)IC = -10mA , IB = -1mA

-0.09 -0.3

-0.55 -0.61 -0.65

V^BE

f^T

VCE = -6V , IC = -1mA

VCE = -6V , IE = -1mA

Gain bandwidth product

MHz

Output capacitance

C^ob

VCB = -30V , IE = 0 , f = 1.0MHz

*. PW 350ìs,duty cycle 2%

hFE Classification

Marking

h^FE

C15

C16

C17

C18

135 270

200 400

300 600

450 900

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与2SA1612相关器件

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2SA1612C15-A	NEC	获取价格	暂无描述
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2SA1612C15-T1-A	RENESAS	获取价格	50mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3
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