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2SA1608-Y14 PDF预览

2SA1608-Y14

更新时间: 2024-11-13 01:07:11
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3页 1698K
描述
PNP Transistors

2SA1608-Y14 数据手册

 浏览型号2SA1608-Y14的Datasheet PDF文件第2页浏览型号2SA1608-Y14的Datasheet PDF文件第3页 
SMD Type  
Transistors  
PNP Transistors  
2SA1608  
Features  
High f  
T : fT=400MHz  
Complementary to 2SC3739  
1.Base  
2.Emitter  
3.Collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
-60  
Unit  
V
VCBO  
VCEO  
VEBO  
-40  
-5  
Collector Current - Continuous  
Collector Power Dissipation  
Junction Temperature  
I
C
-500  
150  
mA  
P
C
mW  
T
J
150  
Storage Temperature range  
Tstg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
-60  
-40  
-5  
Ic= -100 μAI  
Ic= -1 mAI =0  
= -100μAI  
CB= -40 V , I =0  
EB= -4V , I =0  
E=0  
B
I
E
C=0  
I
CBO  
EBO  
V
V
E
-0.1  
-0.1  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=-500 mA, I  
B
B
=-50 mA  
=-50 mA  
-0.45 -0.75  
V
C
=-500 mA, I  
-1  
140  
50  
-1.3  
300  
h
FE(1)  
FE(2)  
V
V
CE= -2V, I  
CE= -2V, I  
C
= -150mA  
= -500mA  
75  
20  
DC current gain  
(Note.1)  
h
C
Turn-on time  
Storage time  
Turn-off time  
t
on  
stg  
off  
25  
Vcc=-30V,IC=-150mA,  
IB1=-IB2=-15mA  
ns  
t
70  
t
100  
5
Collector output capacitance  
Transition frequency  
C
ob  
T
V
V
CB= -10V,I  
E
=0, f=1MHz  
= -20mA  
8
pF  
f
CE= -10V, I  
C
150  
400  
MHz  
Classification of hfe (1)  
Type  
Range  
Marking  
2SA1608-Y12  
75-150  
2SA1608-Y13  
100-200  
Y13  
2SA1608-Y14  
150-300  
Y14  
Y12  
1
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