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2SA1608 PDF预览

2SA1608

更新时间: 2024-11-17 06:23:43
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关光电二极管
页数 文件大小 规格书
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描述
PNP Silicon Epitaxia

2SA1608 数据手册

  
SMD Type  
Transistors  
PNP Silicon Epitaxia  
2SA1608  
Features  
High fT: fT=400MHz.  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-60  
Unit  
V
-40  
V
-5  
V
-500  
mA  
mW  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
150  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain *  
Symbol  
Testconditons  
VCB = -40V, IE=0  
Min  
75  
Typ  
140  
Max  
-100  
-100  
300  
Unit  
nA  
ICBO  
IEBO  
hFE  
VEB = -4V, IC=0  
nA  
VCE = -2V , IC = -150mA  
Collector-emitter saturation voltage *  
Base-emitter saturation voltage *  
Gain bandwidth product  
Output capacitance  
VCE(sat) IC = -500mA , IB = -50mA  
VBE(sat) IC = -500mA , IB = -50mA  
-0.45 -0.75  
V
V
-1  
400  
5
-1.3  
fT  
Cob  
ton  
VCE = -10V , IE = 20mA  
150  
MHz  
pF  
ns  
VCB = -10V , IE = 0 , f = 1.0MHz  
VCC = -30V ,  
8
Turn-on time  
25  
Storage time  
tstg  
toff  
IC = 150mA ,  
70  
ns  
Turn-off time  
IB1 = -IB2 = 15mA  
100  
ns  
*. PW 350ìs,duty cycle 2%  
hFE Classification  
Marking  
hFE  
Y12  
Y13  
Y14  
75 150  
100 200  
150 300  
1
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