2SA1603R

更新时间： 2024-01-11 02:16:43

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
3页	214K
描述
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

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技术参数
数据手册

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2SA1603R 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

2SA1603R 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

2SA 1603

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE(Superminitype)

DESCRIPTION

OUTLINE DRAWING

Unit

：ｍｍ

ꢀ2SA1603 is a super mini package resin sealed

silicon PNP epitaxial transistor,

It is designed for low frequency voltage application.

ꢀ.

2.1

0.425

1.25

0.425

①

②

FEATURE

③

●Small collector to emitter saturation voltage.

VCE(sat)=-0.3V max

●Excellent linearity of DC forward gain.

●Super mini package for easy mounting

APPLICATION

For HybridIC,small type machine low frequency voltage

Amplify application.

JEITA：SC-70

TERMINAL CONNECTER

①：BASE

MAXIMUM RATINGS（Ta=25℃）

Symbol

V_CBO

V_CEO

V_EBO

I _O

Parameter

Ratings

-50

Unit

②：EMITTER

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

③：COLLECTOR

-50

-6

-100

℃

P_c

Collector dissipation

Junction temperature

Storage temperature

150

T_j

＋125

-55～＋125

T_stg

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Unit

ꢀV

Min

-50

Typ

Max

C to E break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain

C to E SaturationVlotage

Gain bandwidth product

Collector output capacitance

V(BR)CEO

ICBO

I _C=-100μA ,R _BE=∞

V _CB=-50V, I _E=0mA

V _EB=-4V, I _C=0mA

-0.5

820

μA

IEBO

hFE

V _CE=-6V, I _C=-1mAꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ※

V _CE=-6V, I _C=-0.1mA

ꢀ120

hFE

ꢀ70

VCE(sat) I _C=-30mA ,I =-1.5mA

-0.3

V _CE=-6V, I _E=10mA

200

2.5

MHz

Cob

V _CB=-6V, I _E=0,f=1MHz

※）ꢀItꢀshowsꢀhFEꢀclassificationꢀinꢀbelowꢀtable.

Item

Ｑ

Ｒ

Ｓ

ꢀＴ

120~270

180~390

270~560

390~820

ｈＦＥꢀItem

ISAHAYA

ꢀELECTRONICSꢀCORPORATION

12 3

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