〈SMALL-SIGNAL TRANSISTOR〉
2SA 1603
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Superminitype)
DESCRIPTION
OUTLINE DRAWING
Unit
:mm
ꢀ2SA1603 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
ꢀ.
2.1
0.425
1.25
0.425
①
②
FEATURE
③
●Small collector to emitter saturation voltage.
VCE(sat)=-0.3V max
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
APPLICATION
For HybridIC,small type machine low frequency voltage
Amplify application.
JEITA:SC-70
TERMINAL CONNECTER
①:BASE
MAXIMUM RATINGS(Ta=25℃)
Symbol
VCBO
VCEO
VEBO
I O
Parameter
Ratings
-50
Unit
V
②:EMITTER
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
③:COLLECTOR
-50
V
-6
V
-100
mA
mW
℃
℃
Pc
Collector dissipation
Junction temperature
Storage temperature
150
Tj
+125
-55~+125
Tstg
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Parameter
Symbol
Test conditions
Unit
ꢀV
Min
-50
-
Typ
-
Max
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E SaturationVlotage
Gain bandwidth product
Collector output capacitance
V(BR)CEO
ICBO
I C=-100μA ,R BE=∞
V CB=-50V, I E=0mA
V EB=-4V, I C=0mA
-
-0.5
-0.5
820
-
-
μA
μA
IEBO
-
-
hFE
V CE=-6V, I C=-1mAꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ※
V CE=-6V, I C=-0.1mA
ꢀ120
-
hFE
ꢀ70
-
VCE(sat) I C=-30mA ,I =-1.5mA
B
-
-
-
-
-0.3
-
V
fT
V CE=-6V, I E=10mA
200
2.5
MHz
pF
Cob
V CB=-6V, I E=0,f=1MHz
-
※)ꢀItꢀshowsꢀhFEꢀclassificationꢀinꢀbelowꢀtable.
Item
Q
R
S
ꢀT
120~270
180~390
270~560
390~820
hFEꢀItem
ISAHAYA
ꢀELECTRONICSꢀCORPORATION