Datasheet > 2SA1587-G

2SA1587-G

更新时间： 2024-11-19 01:14:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1635K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1587-G 数据手册

SMD Type

Transistors

PNP Transistors

2SA1587

■ Features

● High voltage

● Low noise

● Complementary to 2SC4117

● Small Package

1.Base

2.Emitter

3.Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-120

-5

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Base Current

-100

-20

℃

Collector Power Dissipation

Junction Temperature

100

125

Storage Temperature range

Tstg

-55 to 125

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

-120

-5

Ic= -100 μA， I

Ic= -1 mA，I =0

= -100μA， I

CB= -120 V , I

EB= -5V , I =0

E=0

C=0

CBO

EBO

-0.1

-0.3

-1.2

700

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-10 mA, I

=-1 mA

=-10 mA, I

CE= -6V, I

CE= -6V,

C= -2mA

200

Noise figure

IC= 0.1mA,f=1KHz,Rg=10KΩ

Collector output capacitance

Transition frequency

CB= -10V,I

CE= -6V, I

=0, f=1MHz

C= -1mA

100

MHz

■ Classification of hfe

Type

Range

Marking

2SA1587-G

200-400

2SA1587-L

350-700

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