Datasheet > 2SA1587

2SA1587

更新时间： 2024-11-17 06:23:27

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科信 - KEXIN		/
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描述
Silicon PNP Epitaxial

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中文翻译

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数据手册

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2SA1587 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial

2SA1587

Features

High voltage VCEO=-120V

High hFE hFE=200 to 700

Low noise

Small package

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Emitter-base voltage

Collector-emitter voltage

Collector current

Symbol

V^CBO

V^EBO

V^CEO

I^C

Rating

-120

Unit

-120

-5

-100

Base current

I^B

-20

Collector power dissipation

Junction temperature

Storage temperature range

P^C

100

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Collector cut-off current

Emitter cut-off current

DC current gain

Symbol

I^CBO

Testconditons

Min

200

Typ

Max

-0.1

700

0.3

Unit

ìA

VCB = -120 V, IE = 0

VEB = -5 V, IC = 0

I^EBO

ìA

h^FE

VCE = -6 V, IC = -2 mA

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Noise figure

V^{CE (sat)}IC = -10 mA, IB = -1 mA

MHz

f^T

VCE = -6 V, IE = 1 mA

100

C^ob

VCB = -10 V, IE = 0, f = 1 MHz

V^CE=-6 V, IC=-0.1 mA, f=1 kHz,Rg =10KÙ

1.0

hFE Classification

Marking

Rank

hFE

200 400

350 700

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