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2SA1585S PDF预览

2SA1585S

更新时间: 2024-11-22 14:54:23
品牌 Logo 应用领域
鲁光 - LGE 双极型晶体管
页数 文件大小 规格书
2页 659K
描述
双极型晶体管

2SA1585S 技术参数

极性:PNPCollector-emitter breakdown voltage:20
Collector Current - Continuous:2DC current gain - Min:120
DC current gain - Max:560Transition frequency:200
Package:TO-92SStorage Temperature Range:-55-150
class:Transistors

2SA1585S 数据手册

 浏览型号2SA1585S的Datasheet PDF文件第2页 
2SA1585S  
TO-92S Transistor (PNP)  
TO-92S  
1. EMITTER  
2. COLLECTOR  
3. BASE  
1 2 3  
Features  
Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A)  
Excellent DC current gain characteristics.  
Power dissipation  
—
—
—
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
-20  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-20  
V
-6  
V
Dimensions in inches and (millimeters)  
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
-2  
A
PC  
400  
150  
-55-150  
mW  
Tj  
Tstg  
Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
MIN  
-20  
-20  
-6  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= -50μA , IE=0  
IC= -1mA , IB=0  
IE=- 50μA, IC=0  
V
V
VCB=-20V , IE=0  
VEB= -5V , IC=0  
VCE=-2V, IC= -0.1A  
IC= -2A, IB=-0.1A  
-0.1  
-0.1  
560  
-0.5  
μA  
μA  
Emitter cut-off current  
DC current gain  
IEBO  
hFE  
120  
200  
Collector-emitter saturation voltage  
Transition frequency  
VCEsat  
V
VCE=-2V, IC=-0.5A  
MHz  
fT  
F=100MHz  
CLASSIFICATION OF hFE  
Q
Rank  
R
s
Range  
120-170  
180-390  
270-560  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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