2SA1585S

更新时间： 2024-09-24 04:25:51

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
1页	64K
描述
Plastic-Encapsulated Transistors

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中文翻译

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数据手册

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2SA1585S 数据手册

Transys

Electronics

I M I T E D

TO-92S Plastic-Encapsulated Transistors

2SA1585S TRANSISTOR (PNP)

TO-92S

1. EMITTER

FEATURES

Power dissipation

2. COLLECTOR

3. BASE

P_D: 0.4W (Tamb=25℃)

Collector current

I _CM: -2A

123

Collector-base voltage

V_(BR)CBO: -20V

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic= -50µA , I_E=0

MIN

-20

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -1 mA , I_B=0

I_E=- 50µA, I_C=0

V_CB=-20V , I_E=0

V_EB= -5V , I_C=0

V_CE=-2 V, I_C= -0.1A

-0.1

390

-0.5

µA

Emitter cut-off current

I_EBO

DC current gain

h_FE

120

200

Collector-emitter saturation voltage

V_CEsat

I_C= -2A, I_B=-0.1A

V_CE=-2V, I_C=-0.5A

F=100MHz

Transition frequency

MHz

f_T

CLASSIFICATION OF h_FE

Rank

Range

120-170

180-390

中文翻译

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