2SA1585E

更新时间： 2024-11-21 07:29:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体整流二极管晶体管
页数	文件大小	规格书
3页	224K
描述
TRANSISTOR

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中文翻译

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技术参数
数据手册

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2SA1585E 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Is Samacsys：	N	Base Number Matches：	1

2SA1585E 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03A Plastic-Encapsulate Transistors

WBFBP-03A

2SA1585E TRANSISTOR

(1.6×1.6×0.5)

unit: mm

TOP

DESCRIPTION

PNP Epitaxial planar type Silicon Transistor

1. BASE

FEATURES

2. EMITTER

3. COLLECTOR

Low V_CE(sat).V_CE(sat) = -0.2V (Typ.)(I_C/I_B=-2A/-0.1A)

BACK

APPLICATION

Excellent current gain characteristics

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM, Note book PC, etc.)

MARKING:AEQ, AER, AES

AEQ

B E

MAXIMUM RATINGS T_A=25℃ unless otherwise noted

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-20

Units

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-20

-6

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

-2

P_C

150

-55-150

T_j

℃

T_stg

ELECTRICAL CHARACTERISTICS (Ta=25℃

unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

-20

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -50µA , I_E=0

I_C= -1mA , I_B=0

I_E=- 50µA, I_C=0

V_CB=-20V , I_E=0

V_EB= -5V , I_C=0

V_CE=-2 V, I_C= -0.1A

I_C= -2A, I_B=-0.1A

-0.1

560

-0.5

µA

Emitter cut-off current

I_EBO

DC current gain

h_FE

120

Collector-emitter saturation voltage

V_CEsat

_CE=-2V, I_C=-0.5A

f=100MHz

_CB=-10V,I_E=0,f=1MHz

Transition frequency

240

MHz

f_T

Collector output capacitance

C_obo

12 3

中文翻译

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