Datasheet > 2SA1585

2SA1585

更新时间： 2023-12-06 20:02:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	632K
描述
SOT-23

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中文翻译

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数据手册

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2SA1585 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

2SA1585 TRANSISTOR (PNP)

SOT-23

FEATURES

Low VCE(sat)

Excellent DC current gain characteristics. Power dissipation

1. BASE

MAXIMUM RATINGS* T_A=25℃ unless otherwise noted

2. EMITTER

3. COLLECTOR

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-20

-6

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

-2

P_C

350

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

-20

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -50µA , I_E=0

I_C= -1 mA , I_B=0

I_E=- 50µA, I_C=0

V_CB=-20V , I_E=0

V_EB= -5V , I_C=0

V_CE=-2 V, I_C= -0.1A

-0.1

390

-0.5

µA

Emitter cut-off current

I_EBO

DC current gain

h_FE

120

Collector-emitter saturation voltage

Transition frequency

V_CEsat

I_C= -2A,

I_B=-0.1A

_CE=-2V, I_C=-0.5A

f=100MHz

240

MHz

f_T

CLASSIFICATION OF h_FE

Rank

Range

120-270

AEQ

180-390

Marking

AER

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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