Datasheet > 2SA1580-QL4

2SA1580-QL4

更新时间： 2024-11-07 01:07:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	599K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1580-QL4 数据手册

SMD Type

TransistIoCrs

PNP Transistors

2SA1580

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

Features

High fT.

Small reverse transfer capacitance.

+0.02

-0.02

+0.1

-0.1

0.15

0.95

Adoption of FBET process.

+0.1

-0.2

1.9

● Complementary to 2SC4104

1. Base

2. Emitter

3. Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-70

Unit

-60

-4

-50

Collector current (pulse)

Collector dissipation

I^cp

-100

200

150

P^C

Junction temperature

Storage temperature

T^j

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

-70

-60

-4

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CBO

Ic= -100 μA， IE=0

CEO

EBO

∞

Ic= -1 mA，R BE

= -100μA， I

CB= -40 V , I =0

C=0

CBO

EBO

-0.1

-1

EB= -3V , I

=-20mA, I

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=- 2mA

-0.6

-1

=-20mA, I

CE= -10, I

C= -10mA

270

Base-collector time constant

Reverse transfer capacitance

Output capacitance

rbb,C

CE= -10V, I

C= 10mA

CB= -10V, f=1MHz

1.3

1.7

180

Transition frequency

CE= -6V, I

= 10mA

MHz

■ Classification of hfe

Type

Range

Marking

2SA1580-QL3

60-120

2SA1580-QL4

90-180

2SA1580-QL5

135-270

QL5

QL3

QL4

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