Datasheet > 2SA1580

2SA1580

更新时间： 2024-11-06 12:55:35

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	38K
描述
PNP Epitaxial Planar Silicon Transistor

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中文翻译

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数据手册

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2SA1580 数据手册

SMD Type

TransistIoCrs

PNP Epitaxial Planar Silicon Transistor

2SA1580

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High fT.

Small reverse transfer capacitance.

Adoption of FBET process.

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-70

Unit

-60

-4

-50

Collector current (pulse)

Collector dissipation

I^cp

-100

200

P^C

Junction temperature

Storage temperature

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VCB = -40V, IE=0

Min

Typ

Max

Unit

ìA

Collector cutoff current

I^CBO

I^EBO

h^FE

f^T

-0.1

-1

Emitter cutoff current

VEB = -3V, IC=0

ìA

DC current gain

VCE = -10V , IC = -10mA

270

Gain bandwidth product

350

700

MHz

Base-collector time constant

Output capacitance

r^bb,cc VCE = -10V , IC = -10mA

C^ob

C^re

VCB = -10V , f = 1.0MHz

1.7

1.3

Reverse transfer capacitance

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V^CE(sat)IC = -20mA , IB = -2mA

V^BE(sat)IC = -20mA , IB = -2mA

V^(BR)CBOIC = -10ìA , IE = 0

-0.6

-1

-70

-60

-4

V^(BR)CEO

IC = -1mA , RBE =

V^(BR)EBOIE = -10ìA , IC = 0

hFE Classification

Marking

Rank

hFE

60 120

90 180

135 270

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