Datasheet > 2SA1580

2SA1580

更新时间： 2024-11-18 12:32:35

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	70K
描述
High fT. Small reverse transfer capacitance. Adoption of FBET process.

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2SA1580 数据手册

Product specification

2SA1580

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High f^T.

Small reverse transfer capacitance.

Adoption of FBET process.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-70

Unit

-60

-4

-50

Collector current (pulse)

Collector dissipation

I^cp

-100

200

P^C

Junction temperature

Storage temperature

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

V^CB= -40V, I^E=0

Min

Typ

Max

-0.1

-1

Unit

ìA

Collector cutoff current

I^CBO

IEBO

hFE

f^T

Emitter cutoff current

VEB = -3V, IC=0

ìA

DC current gain

VCE = -10V , IC = -10mA

V^CE= -10V , I^C= -10mA

270

Gain bandwidth product

350

700

MHz

Base-collector time constant

Output capacitance

r^bb,c^cV^CE= -10V , I^C= -10mA

C^ob

C^re

V^CB= -10V , f = 1.0MHz

1.7

1.3

Reverse transfer capacitance

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V^CE(sat)I^C= -20mA , I^B= -2mA

V^BE(sat)I^C= -20mA , I^B= -2mA

V^(BR)CBOI^C= -10ìA , I^E= 0

-0.6

-1

-70

-60

-4

V^(BR)CEO

I^C= -1mA , R^BE=

V(BR)EBO IE = -10ìA , IC = 0

hFE Classification

Marking

Rank

hFE

60 120

90 180

135 270

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