Datasheet > 2SA1579_11

2SA1579_11

更新时间： 2024-11-20 12:50:15

品牌	Logo	应用领域
罗姆 - ROHM		晶体放大器晶体管
页数	文件大小	规格书
3页	161K
描述
High-voltage Amplifier Transistor

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中文翻译

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数据手册

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2SA1579_11 数据手册

High-voltage Amplifier Transistor (120V, 50mA)

2SA1579 / 2SA1514K

Features

Dimensions (Units : mm)

1) High breakdown voltage. (BVCEO = 120V)

2) Complements the 2SC4102 / 2SC3906K

2SA1579

Absolute maximum ratings (Ta=25C)

1.25

2.1

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

−120

−5

−50

0.2

Unit

VCBO

VCEO

VEBO

0.1Min.

Each lead has same dimensions

ROHM : UMT3

EIAJ : SC-70

JEDEC : SOT-323

(1) Emitter

(2) Base

(3) Collector

Collector power dissipation

Junction temperature

Storage temperature

150

°C

Tstg

−55 to +150

2SA1514K

1.6

Packaging specifications and hFE

2.8

Type

2SA1579

UMT3

2SA1514K

SMT3

Package

0.3Min.

Each lead has same dimensions

Marking

Code

∗

R∗

T146

ROHM : SMT3

EIAJ : SC-59

JEDEC : SOT-346

T106

3000

(1) Emitter

(2) Base

(3) Collector

Basic ordering unit (pieces)

3000

Denotes hFE

∗

Electrical characteristics (Ta=25C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

Min.

Typ.

−

140

3.2

Max.

Unit

Conditions

BV^CBO

BVCEO

BVEBO

−120

−5

−

180

−

−0.5

560

−

= −50μA

= −1mA

= −50μA

CB= −100V

EB= −4V

CBO

EBO

CE(sat)

μA

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

C/I

= −10mA/−1mA

= −2mA

−

MHz

CE= −6V, I

Transition frequency

CE= −12V, I

CB= −12V, I

=2mA, f=100MHz

=0A, f=1MHz

Output capacitance

Cob

−

www.rohm.com

2012.01 - Rev.B

1/2

12 3

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