Datasheet > 2SA1579-S

2SA1579-S

更新时间： 2024-12-01 01:14:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1115K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1579-S 数据手册

SMD Type

Transistors

PNP Transistors

2SA1579

■ Features

● High breakdown voltage. (BVCEO = -120V)

● Complements the 2SC4102.

1.Base

2.Emitter

3.Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-120

-5

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

-50

100

150

℃

Storage Temperature range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

-120

-5

Ic= -50 μA， I

Ic= -1 mA，I =0

= -50μA， I =0

CB= -100 V , I =0

EB= -4V , I =0

E=0

CBO

EBO

-0.5

-1.2

560

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-10 mA, I

=-1 mA

=-10 mA, I

CE= -6V, I

= -2mA

=0, f=1MHz

= -2mA,f=30MHz

180

Collector output capacitance

Transition frequency

CB= -12V,I

3.2

CE= -12V, I

140

MHz

■ Classification of hfe

Type

Range

Marking

2SA1579-R

180-390

2SA1579-S

270-560

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