Datasheet > 2SA1579

2SA1579

更新时间： 2024-11-21 14:53:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	778K
描述
SOT-323

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中文翻译

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数据手册

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2SA1579 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

SOT-323

2SA1579 ^{TRANSISTOR (PNP)}

1. BASE

FEATURES

2. EMITTER

3. COLLECTOR

High breakdown voltage. (BV_CEO= -120V)

Complements the 2SC4102

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-120

-5

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-50

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

100

P_C

R_ΘJA

1250

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

-120

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-50μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-50μA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=-100V,I_E=0

-0.5

560

-0.5

μA

Emitter cut-off current

V_EB=-4V,I_C=0

DC current gain

V_CE=-6V,I_C=-2mA

180

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=-10mA,I_B=-1mA

V_CE=-12V,I_C=-2mA,f=30MHz

V_CB=-12V,I_E=0,f=1MHz

140

3.2

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

180-390

270-560

Range

Marking

www.jscj-elec.com

Rev. - 2.0

12 3 4

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