Datasheet > 2SA1579

2SA1579

更新时间： 2024-11-17 07:29:43

品牌	Logo	应用领域
科信 - KEXIN		晶体放大器晶体管光电二极管
页数	文件大小	规格书
1页	45K
描述
High-Voltage Amplifier Transistor

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中文翻译

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数据手册

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2SA1579 数据手册

SMD Type

Transistors

High-Voltage Amplifier Transistor

2SA1579

Features

High breakdown voltage.

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-120

Unit

-120

-5

Collector current

-50

Collector power dissipation

Junction temperature

Storage temperature

P^C

0.2

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-120

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBOIC=-50ìA

BV^CEOIC=-1mA

BV^EBOIE=-50ìA

I^CBO

I^EBO

V^CE(sat)IC=-10mA, IB=-1mA

h^FEVCE=-6V, IC=-2mA

f^T

VCB=-100V

-0.5

560

ìA

Emitter cutoff current

VEB=-4V

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance

180

VCE=-12V, IE= 2mA, f=100MHz

VCB=-12V, IE=0A, f=1MHz

140

3.2

MHz

Transition frequency

C^ob

hFE Classification

Marking

Rank

hFE

180 390

270 560

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