Datasheet > 2SA1577

2SA1577

更新时间： 2024-11-22 14:53:43

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	719K
描述
双极型晶体管

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技术参数
数据手册

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2SA1577 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	32
Collector Current - Continuous：	0.5	DC current gain - Min：	82
DC current gain - Max：	390	Transition frequency：	200
Package：	SOT-323	Storage Temperature Range：	-55-150
class：	Transistors

2SA1577 数据手册

2SA1577

SOT-323 Transistor(PNP)

1. BASE

SOT-323

2. EMITTER

3. COLLECTOR

Features

Large I_C. _CMax.=-500mA

Low V_CE(sat).Ideal for low-voltage operation.

Complements the 2SC4097.

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-40

Units

Dimensions in inches and (millimeters)

-32

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-500

200

℃

P_C

T_J

150

T_stg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-40

-32

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-100μA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=-20V,I_E=0

V_EB=-4V,I_C=0

-1

μA

Emitter cut-off current

DC current gain

V_CE=-3V,I_C=-10mA

390

-0.4

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C= -100mA, I_B=-10mA

V_CE=-5V, I_C=-20mA ,f =100MHz

V_CB=-10V,I_E=0,f=1MHz

200

MHz

Collector Output Capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

82-180

120-270

180-390

Range

MARKING

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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