Datasheet > 2SA1575-D

2SA1575-D

更新时间： 2024-10-31 01:03:47

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科信 - KEXIN		放大器晶体管
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描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1575-D 数据手册

SMD Type

Transistors

PNP Transistors

2SA1575

1.70 0.1

■ Features

● High f

● High breakdown voltage.

● Small reverse transfer capacitance and excellent

0.42 0.1

0.46 0.1

high-frequency characteristic.

● Complementary to 2SC4080

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

VCEO

VEBO

-200

Collector - Emitter Voltage

Emitter - Base Voltage

-4

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

-100

℃

-200

500

150

Storage Temperature range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA，RBE= ∞

= -100μA， I =0

CB= -150 V , I =0

EB= -3V , I =0

Min

-200

-4

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

-0.1

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

IC=-20 mA, I

=-2 mA

IC=-20 mA, I

-1

CE= -10V, I

= -10mA

320

DC current gain

hFE

C= -60mA

Reverse Transfer Capacitance

Collector output capacitance

Transition frequency

CB= -30V, f=1MHz

1.7

2.3

400

CE= -30V, I

C= -30mA

MHz

■ Classification of hfe

Type

Range

Marking

2SA1575-C

40-80

2SA1575-D

60-120

2SA1575-E

100-200

AFE

2SA1575-F

160-320

AFF

AFC

AFD

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