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2SA1568

更新时间: 2024-10-29 22:52:35
品牌 Logo 应用领域
三垦 - SANKEN 晶体驱动器稳压器晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
1页 28K
描述
Silicon PNP Epitaxial Planar Transistor(DC Motor Driver, Chopper Regulator and General Purpose)

2SA1568 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220F, FM20, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.41其他特性:BUILT-IN BIAS RESISTOR
外壳连接:ISOLATED最大集电极电流 (IC):12 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHzBase Number Matches:1

2SA1568 数据手册

  
E
C
(250)  
Bu ilt -in Dio d e a t C –E  
Lo w VCE (s a t )  
B
Equivalent  
curcuit  
2 S A1 5 6 8  
Electrical Characteristics  
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065)  
Application : DC Motor Driver, Chopper Regulator and General Purpose  
External Dimensions FM20 (TO220F)  
(Ta=25°C)  
Absolute maximum ratings (Ta=25°C)  
Symbol  
2SA1568  
Symbol  
2SA1568  
–60  
Conditions  
Unit  
µA  
mA  
V
Unit  
V
±0.2  
4.2  
±0.2  
10.1  
c
0.5  
2.8  
ICBO  
–100max  
–60max  
–60min  
50min  
VCB=60V  
VCBO  
VCEO  
VEBO  
IC  
IEBO  
VEB=6V  
–60  
V
V(BR)CEO  
hFE  
IC=25mA  
–6  
V
±0.2  
ø3.3  
a
b
VCE=1V, IC=6A  
IC=6A, IB=0.3A  
IECO=10A  
12  
+
A
VCE(sat)  
VFEC  
fT  
–0.35max  
–2.5max  
40typ  
IB  
V
V
–3  
35(Tc=25°C)  
150  
A
PC  
W
°C  
°C  
VCE=12V, IE=0.5A  
VCB=10V, f=1MHz  
MHz  
pF  
Tj  
±0.15  
1.35  
±0.15  
1.35  
COB  
330typ  
Tstg  
to  
–55 +150  
+0.2  
-0.1  
0.85  
+0.2  
-0.1  
0.45  
±0.2  
2.4  
2.54  
2.54  
Typical Switching Characteristics (Common Emitter)  
±0.2  
2.2  
VCC  
(V)  
RL  
IC  
VBB1  
VBB2  
(V)  
IB1  
IB2  
ton  
tstg  
tf  
Weight : Approx 2.0g  
a. Type No.  
b. Lot No.  
()  
(A)  
(V)  
(mA)  
(mA)  
(µs)  
(µs)  
(µs)  
B
C E  
–24  
4
–6  
–10  
5
–120  
120  
0.4typ  
0.4typ  
0.2typ  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=–1V)  
–12  
–12  
–10  
–8  
–6  
–4  
–2  
0
–1.4  
–10  
–8  
–1.0  
–0.5  
0
–6  
–4  
–20mA  
–10mA  
–2  
0
0
–1  
–2  
–3  
–4  
–5  
–6  
–7 10  
–100  
–1000  
–3000  
0
–0.2  
–0.4  
–0.6  
–0.8  
–1.0  
–1.2  
Collector-Emitter Voltage VCE(V)  
Base Current IB(mA)  
Base-Emittor Voltage VBE(V)  
hFE IC Temperature Characteristics (Typical)  
θ
j-a t Characteristics  
hFE IC Characteristics (Typical)  
(VCE=–1V)  
(VCE=–1V)  
4
1
300  
300  
125˚C  
25˚C  
Typ  
–30˚C  
100  
100  
10  
2
10  
2
0.5  
0.3  
1
10  
100  
1000  
–0.02  
–0.1  
–1  
–10  
–0.02  
–0.1  
–1  
–10  
Time t(ms)  
Collector Current IC(A)  
Collector Current IC(A)  
Safe Operating Area (Single Pulse)  
fT IE Characteristics (Typical)  
Pc Ta Derating  
(VCE=–12V)  
35  
30  
50  
–30  
Natural Cooling  
Silicone Grease  
Heatsink: Aluminum  
in mm  
–10  
–5  
Typ  
40  
30  
20  
20  
10  
–1  
150x150x2  
100x100x2  
–0.5  
Without Heatsink  
Natural Cooling  
50x50x2  
–0.1  
Without Heatsink  
2
0
–0.05  
0
–3  
–5  
–10  
–50  
–100  
0.05 0.1  
1
10  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
Emitter Current IE(A)  
24  

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