SMD Type
Transistors
PNP Transistors
2SA1566
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● Low frequency amplifier
1
2
+0.02
-0.02
+0.1
-0.1
0.15
0.95
+0.1
-0.2
1.9
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
-120
-120
-5
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
-100
mA
P
C
150
mW
T
J
150
℃
Storage Temperature range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -100 μA, I =0
Ic= -1 mA,RBE= ∞
= -100μA, I =0
CB= -70 V , I =0
EB= -4V , I =0
Min
-120
-120
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
VCBO
VCEO
VEBO
E
I
E
C
I
CBO
EBO
V
V
E
-0.1
-0.1
-0.15
-1
uA
V
Emitter cut-off current
I
C
Collector-emitter saturation voltage (Note.1)
V
CE(sat)
BE(sat)
I
I
C
=-10 mA, I =-1 mA
B
Base - emitter saturation voltage
(Note.1)
V
C=-10 mA, IB=-1 mA
DC current gain
(Note.1)
h
FE
V
CE= -12V, I
C= -2mA
250
800
Note.1: Pulse test
■ Classification of hfe
Type
Range
Marking
2SA1566-D
250-500
JID
2SA1566-E
400-800
JIE
1
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