Datasheet > 2SA1532_15

2SA1532_15

更新时间： 2024-11-28 01:14:15

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科信 - KEXIN		/
页数	文件大小	规格书
2页	947K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1532_15 数据手册

SMD Type

Transistors

PNP Transistors

2SA1532

■ Features

● High transition frequency fT.

● Complementary to 2SC3930

1.Base

2.Emitter

3.Colletor

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-30

Unit

VCBO

VCEO

VEBO

-20

-5

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

-30

150

℃

Storage Temperature range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-30

-20

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector-Emitter cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

E=0

Ic= -1 mA，I = 0

= -100μA， I

C=0

CBO

CEO

CB= -30 V , I

CE= -20 V , I

-0.1

-100

-0.1

IEBO

EB= -5V , IC=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-10 mA, I

=-1 mA

-0.1

-0.7

=-10 mA, I

-1.2

CE= -10V, I

= -1mA

DC current gain

C= -1mA

220

Noise Figure

CB = –10V, I

= 1mA, f = 5MHz

= 1mA, f = 2MHz

2.8

Reverse transfer impedance

Zrb

CB = –10V, I

Common emitter reverse transfer

capacitance

VCE = –10V, IC = –1mA

f = 10.7MHz

Cre

1.2

Transition frequency

CE= -10V, I

= 1mA,f=200MHz

150

300

MHz

■ Classification of hfe

Type

Range

Marking

2SA1532-B

70-140

2SA1532-C

110-220

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