SMD Type
Transistors
PNP Transistors
2SA1532
■ Features
● High transition frequency fT.
● Complementary to 2SC3930
1.Base
2.Emitter
3.Colletor
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
-30
Unit
V
VCBO
VCEO
VEBO
-20
-5
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
-30
mA
P
C
150
mW
T
J
150
℃
Storage Temperature range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-30
-20
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-Emitter cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100 μA, I
E=0
Ic= -1 mA,I = 0
B
I
E
= -100μA, I
C=0
I
CBO
CEO
V
V
V
CB= -30 V , I
CE= -20 V , I
E
B
=0
=0
-0.1
-100
-0.1
uA
V
I
IEBO
EB= -5V , IC=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=-10 mA, I
B
=-1 mA
=-1 mA
-0.1
-0.7
V
C
=-10 mA, I
B
-1.2
V
BE
V
V
CE= -10V, I
CE= -10V, I
C
= -1mA
DC current gain
h
FE
C= -1mA
70
220
4
Noise Figure
NF
V
CB = –10V, I
E
= 1mA, f = 5MHz
= 1mA, f = 2MHz
2.8
22
dB
Reverse transfer impedance
Zrb
V
CB = –10V, I
E
60
Ω
Common emitter reverse transfer
capacitance
VCE = –10V, IC = –1mA
f = 10.7MHz
Cre
1.2
2
pF
Transition frequency
f
T
V
CE= -10V, I
E
= 1mA,f=200MHz
150
300
MHz
■ Classification of hfe
Type
Range
Marking
2SA1532-B
70-140
EB
2SA1532-C
110-220
EC
1
www.kexin.com.cn