2 S A1 4 9 3
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857)
Application : Audio and General Purpose
External Dimensions MT-200
■Absolute maximum ratings (Ta=25°C)
■Electrical Characteristics
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
2SA1493
Symbol
2SA1493
Unit
Conditions
Unit
µA
µA
V
±0.2
6.0
±0.3
36.4
–200
ICBO
–100max
–100max
–200min
50min
V
VCB=–200V
±0.2
24.4
2.1
±0.1
2-ø3.2
9
IEBO
–200
V
VEB=–6V
V(BR)CEO
hFE
–6
–15
IC=–50mA
V
VCE=–4V, IC=–5A
IC=–10A, IB=–1A
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
a
b
A
IB
VCE(sat)
fT
– 3.0max
20typ
V
MHz
pF
–5
A
PC
150(Tc=25°C)
150
W
°C
°C
2
Tj
COB
400typ
3
+0.2
-0.1
0.65
+0.2
-0.1
1.05
Tstg
–55 to +150
to
to
to
hFE Rank O(50 100), P(70 140), Y(90 180)
+0.3
-0.1
3.0
±0.1
±0.1
5.45
5.45
■Typical Switching Characteristics (Common Emitter)
B
C
E
Weight : Approx 18.4g
a. Type No.
b. Lot No.
RL
IC
VBB1
VBB2
(V)
IB1
IB2
ton
tstg
tf
VCC
(V)
(Ω)
(A)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
12
–5
–10
5
–500
500
0.3typ
0.9typ
0.2typ
–60
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=–4V)
–15
–15
–10
–5
–3
–10
–5
0
–2
–1
IC=–15A
–10A
–5A
0
0
0
–1
–2
–3
–4
0
–1
–2
–3
–4
0
–1
–2
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=–4V)
(VCE=–4V)
2
1
200
300
125˚C
25˚C
Typ
100
–30˚C
100
50
0.5
50
20
–0.02
10
–0.02
0.1
1
10
100
Time t(ms)
1000 2000
–0.1
–0.5 –1
–5 –10 –15
–0.1
–0.5 –1
Collector Current IC(A)
–5 –10 –15
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=–12V)
–50
160
30
20
10ms
Typ
120
80
–10
–5
–1
10
–0.5
Without Heatsink
Natural Cooling
40
Without Heatsink
5
0
–0.1
0
0.02
–2
–10
–100
–300
0.1
1
10
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
Emitter Current IE(A)
21