2 S A1 4 9 2
Absolute maximum ratings (Ta=25°C)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856)
Application : Audio and General Purpose
External Dimensions MT-100(TO3P)
■Electrical Characteristics
■
(Ta=25°C)
Ratings
Unit
Symbol
Symbol
Ratings
–100max
–100max
–180min
50min
Conditions
Unit
µA
µA
V
±0.2
4.8
±0.4
15.6
±0.1
2.0
9.6
V
VCBO
VCEO
VEBO
IC
–180
ICBO
VCB=–180V
–180
V
IEBO
VEB=–6V
–6
V
V(BR)CEO
hFE
IC=–50mA
a
b
±0.1
ø3.2
–15
A
VCE=–4V, IC=–3A
IC=–5A, IB=–0.5A
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
IB
VCE(sat)
fT
–2.0max
20typ
–4
130(Tc=25°C)
150
A
V
MHz
pF
PC
W
°C
°C
2
Tj
COB
500typ
3
+0.2
-0.1
+0.2
-0.1
Tstg
to
–55 +150
1.05
0.65
1.4
to
to
to
hFE Rank O(50 100), P(70 140), Y(90 180)
±0.1
±0.1
5.45
5.45
■Typical Switching Characteristics (Common Emitter)
B
C
E
Weight : Approx 6.0g
a. Part No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
b. Lot No.
–40
4
–10
–10
5
–1
1
0.6typ
0.9typ
0.2typ
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=–4V)
–15
–15
–10
–5
– 3
–10
–5
0
–2
–1
–50mA
IB=–20mA
IC=–10A
–5A
0
0
0
–1
–2
–3
–4
0
–0.5
–1.0
–1.5
–2.0
0
–1
–2
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=–4V)
(VCE=–4V)
3
200
300
125˚C
25˚C
Typ
100
1
–30˚C
100
50
0.5
50
20
–0.02
10
–0.02
0.1
1
10
100
Time t(ms)
1000 2000
–0.1
–0.5 –1
–5 –10 –15
–0.1
–0.5 –1
Collector Current IC(A)
–5 –10 –15
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=–12V)
–40
130
100
30
–10
–5
Typ
20
10
0
50
–1
–0.5
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0
–0.1
–3
–10
–100
–200
0.02
0.1
1
10
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
Emitter Current IE(A)
20