Datasheet > 2SA1463-K

2SA1463-K

更新时间： 2024-11-25 01:14:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1216K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1463-K 数据手册

SMD Type

Transistors

PNP Transistors

2SA1463

■ Features

1.70 0.1

● High speed ,high voltage switching

● Low collector saturaton voltage

● Complementary to 2SC3736

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

VCEO

VEBO

-60

Collector - Emitter Voltage

Emitter - Base Voltage

-45

-5

Collector Current - Continuous

-1

Collector Current - Pulse

-2

Collector Power Dissipation

Junction Temperature

℃

150

Storage Temperature range

Tstg

-55 to 150

* : Pulsed:PW ≤ 10ms,Duty Cycle ≤ 50℅

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I

Min

-60

-45

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

CB= -60 V , I

-0.5

EB= -4V , IC=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-500 mA, I

=-50 mA

-0.26 -0.6

-0.98 -1.2

200

C=-500 mA, I

hFE(1)

CE= -10V, I

CE=- 10V, I

= -50mA

DC current gain

FE(2)

C= -500mA

Turn-on time

Storage time

Turn -off time

stg

off

=-500mA,IB1=-IB2=-50mA

100

Collector output capacitance

Transition frequency

CB= -10V, I

CE= -10V, I

= 0,f=1MHz

= 100mA

300

400

MHz

* : Pulsed:PW ≤ 350us,Duty Cycle ≤ 2℅

■ Classification of hfe(1)

Type

Range

Marking

2SA1463-L

60-120

2SA1463-K

100-200

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