Datasheet > 2SA1461_15

2SA1461_15

更新时间： 2022-02-26 11:23:21

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1463K
描述
PNP Transistors

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获取价格

数据手册

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2SA1461_15 数据手册

SMD Type

Transistors

PNP Transistors

2SA1461

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High speed switching

● High gain bandwidth product

● Complementary to 2SC3734

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-40

Unit

VCBO

VCEO

VEBO

-40

-5

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

-200

200

150

℃

Storage Temperature range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-40

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA， I =0

= -100μA， I

E=0

C=0

CBO

EBO

CB= -30 V , I

-0.1

-0.4

EB= -4V , IC=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-50 mA, I

=-5mA

-0.1

=-50 mA, I

-0.8 -0.95

FE(1)

FE(2)

CE= -1V, I

= -10mA

180

100

300

DC current gain *

CE=- 10 V, I

C= -100mA

Turn-on time

stg

off

225

300

4.5

CC=-3V,I

=-10mA,IB1=-IB2=-1 mA

Storage time

110

Turn -off time

Collector output capacitance

Transition frequency

CB= -5V, I

= 0,f=1MHz

= 10mA

2.5

CE= -20V, I

200

510

MHz

* : Pulsed:PW ≤ 350us,Duty Cycle ≤ 2℅

■ Classification of hfe(1)

Type

Range

Marking

2SA1461-Y22

75-150

2SA1461-Y23

100-200

Y23

2SA1461-Y24

150-300

Y24

Y22

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