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2SA1461 PDF预览

2SA1461

更新时间: 2024-01-07 01:01:54
品牌 Logo 应用领域
TYSEMI 晶体开关晶体管光电二极管
页数 文件大小 规格书
1页 51K
描述
High speed switching: tstg=110ns. High gain bandwidth product: fT=510MHz.

2SA1461 技术参数

生命周期:Obsolete零件包装代码:SC-59
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.32
最大集电极电流 (IC):0.2 A基于收集器的最大容量:4.5 pF
集电极-发射极最大电压:40 V配置:SINGLE
JESD-30 代码:R-PDSO-G3JESD-609代码:e6
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):510 MHz
Base Number Matches:1

2SA1461 数据手册

  
Product specification  
2SA1461  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
Features  
3
High speed switching: tstg=110ns.  
High gain bandwidth product: fT=510MHz.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
-0.01  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-40  
Unit  
V
Collector-emitter voltage  
Emitter-base voltage  
-40  
V
-5  
V
Collector current  
-200  
mA  
Maximum Total power dissipation  
at 25 ambient temperature  
Maximum Junction temperature  
Maximum Storage temperature  
PT  
200  
mW  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
Symbol  
ICBO  
IEBO  
Testconditons  
VCB = -30V, IE=0  
Min  
Typ  
Max  
-100  
-100  
300  
Unit  
nA  
VEB = -3V, IC=0  
nA  
VCE = -1V , IC = -10mA  
VCE = -1V , IC = -100mA  
75  
25  
180  
100  
-0.1  
DC current gain *  
hFE  
Collector-emitter saturation voltage *  
Base-emitter saturation voltage *  
Gain bandwidth product  
Output capacitance  
VCE(sat) IC = -50mA , IB = -5mA  
VBE(sat) IC = -50mA , IB = -5mA  
-0.4  
V
V
-0.8 -0.95  
510  
fT  
Cob  
ton  
VCE = -20V , IE = 10mA  
200  
MHz  
pF  
ns  
VCB = -5V , IE = 0 , f = 1.0MHz  
VCC = -3V ,  
2.5  
4.5  
70  
Turn-on time  
Storage time  
tstg  
toff  
IC = -10mA ,  
110  
225  
300  
ns  
Turn-off time  
IB1 = -IB2 = -1mA  
ns  
*. PW 350ìs,duty cycle 2%  
hFE Classification  
Marking  
hFE  
Y22  
Y23  
Y24  
75 150  
100 200  
150 300  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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