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2SA1418-T PDF预览

2SA1418-T

更新时间: 2024-11-10 01:08:23
品牌 Logo 应用领域
科信 - KEXIN 开关晶体管
页数 文件大小 规格书
3页 1577K
描述
PNP Transistors

2SA1418-T 数据手册

 浏览型号2SA1418-T的Datasheet PDF文件第2页浏览型号2SA1418-T的Datasheet PDF文件第3页 
SMD Type  
Transistors  
PNP Transistors  
2SA1418  
1.70 0.1  
Features  
Adoption of FBET, MBIT Processes  
High Breakdown Voltage and Large Current Capacity  
Fast Switching Speed  
0.42 0.1  
0.46 0.1  
Complementary to 2SC3648  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
-180  
-160  
-6  
V
Collector Current - Continuous  
Collector Current - Pulsed  
Collector Power Dissipation  
Junction Temperature  
I
C
-0.7  
A
mW  
I
CP  
-1.5  
P
C
500  
T
J
150  
Storage Temperature range  
Tstg  
-55 to 150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Test Conditions  
Ic= -100 μAI =0  
Ic= -1 mARBE=∞  
= -100μAI =0  
CB= -120 V , I =0  
EB= -4V , I =0  
Min  
-180  
-160  
-6  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
E
I
E
C
I
CBO  
EBO  
V
V
E
-0.1  
-0.1  
-0.5  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=-250mA, I  
B
B
=- 25mA  
=- 25mA  
-0.2  
V
C=-250mA, I  
-0.85 -1.2  
h
FE  
V
CE= -5V, I  
C= -100mA  
100  
400  
Turn-on time  
t
on  
60  
900  
60  
See Test Circuit.  
ns  
Storage time  
ts  
Fall time  
t
f
Output capacitance  
C
ob  
T
V
V
CB= -10V, I  
CE= -10V, I  
E
E
= 0,f=1MHz  
= -50mA  
11  
pF  
Transition frequency  
f
120  
MHz  
Classification of hfe  
Type  
Range  
Marking  
2SA1418-R  
100-200  
ADR*  
2SA1418-S  
140-280  
ADS*  
2SA1418-T  
200-400  
ADT*  
1
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