Datasheet > 2SA1416

2SA1416

更新时间： 2024-09-18 06:24:03

品牌	Logo	应用领域
科信 - KEXIN		晶体开关晶体管高压
页数	文件大小	规格书
3页	509K
描述
High-Voltage Switching Applications

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数据手册

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2SA1416 数据手册

SMD Type

Transistors

High-Voltage Switching Applications

2SA1416

Features

Adoption of FBET, MBIT Processes

High Breakdown Voltage and Large Current Capacity

Fast Switching Time

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-120

-100

-6

Collector Current

-1

-2

Collector Current (Pulse)

I^CP

P^C

500

Collector Power Dissipation

P^{C *}

T^j

1.3

Jumction temperature

150

Storage temperature Range

Tstg

-55 to +150

* Mounted on ceramic board (250 mm²x 0.8 mm)

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

I^EBO

Testconditons

Min

Typ

Max

-100

Unit

Collector Cut-off Current

VCB = -100V , IE = 0

VEB = -4V , IC = 0

Emitter Cut-off Current

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

V^(BR)CBOIC = -10uA , IE = 0

V^(BR)CEO

-120

-100

-6

IC = -1mA , RBE =

V^(BR)EBOIE = -10uA , IC = 0

h^FE

VCE = -5V , IC = -100mA

100

400

-0.6

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Gain-Bandwidth Product

VCE(sat) IC = -400mA , IB = -40mA

V^BE(sat)IC = -400mA , IB = -40mA

-0.2

-0.85 -1.2

f^T

VCE = -10V , IC = -100mA

120

MHz

Collector Output Capacitance

C^ob

VCB = -10V , IE = 0 , f = 1MHz

See Test Circuit.

Turn-On Time

Storage Time

Fall Time

t^on

t^stg

t^f

700

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