Datasheet > 2SA1415_15

2SA1415_15

更新时间： 2024-11-20 01:08:23

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1390K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1415_15 数据手册

SMD Type

Transistors

PNP Transistors

2SA1415

1.70 0.1

Features

Adoption of FBET Process

High Breakdown Voltage (VCEO = 160V)

Excellent Linearlity of hFE and Small Cob

Fast Switching Speed

0.42 0.1

0.46 0.1

● Complementary to 2SC3645

1.Base

2.Collector

3.Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

VCBO

VCEO

VEBO

-180

-160

-5

Collector Current - Continuous

Collector Current - Pulsed

Collector Power Dissipation

Junction Temperature

-140

℃

-200

500

150

Storage Temperature range

Tstg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I

Min

-180

-160

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

CB= -80 V , I

-0.1

EB= -4V , I

=-50mA, I

C=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=- 5mA

-0.14 -0.4

=-50mA, I

-1.2

CE= -5V, I

C= -10mA

100

400

Turn-on time

0.1

0.15

0.1

See Test Circuit.

Storage time

Fall time

Output capacitance

CB= -10V, I

CE= -10V, I

= 0,f =1MHz

= -10mA

Transition frequency

150

MHz

■ Classification of hfe

Type

Range

Marking

2SA1415-R

100-200

AAR*

2SA1415-S

140-280

AAS*

2SA1415-T

200-400

AAT*

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