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2SA1369-H PDF预览

2SA1369-H

更新时间: 2022-02-26 12:04:39
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3页 1302K
描述
PNP Transistors

2SA1369-H 数据手册

 浏览型号2SA1369-H的Datasheet PDF文件第2页浏览型号2SA1369-H的Datasheet PDF文件第3页 
SMD Type  
Transistors  
PNP Transistors  
2SA1369  
1.70 0.1  
Features  
High Collector Current (ICM = -3A, IC = -1.5A)  
High Collector Dissipation PC = 500mW  
Small Package For Mounting  
0.42 0.1  
0.46 0.1  
Complementary to 2SC3439  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-30  
Unit  
V
-20  
V
-6  
V
Collector Current  
-1.5  
-3  
A
Peak Collector Current  
Collector Power Dissipation  
Jumction temperature  
ICM  
A
PC  
500  
+150  
mW  
Tj  
Storage temperature Range  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
-30  
-20  
-6  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
V
V
V
CBO  
Ic= -100 μAI  
Ic= -1 mARBE=∞  
= -100μAI =0  
CB= -20 V , I =0  
EB= -5V , I =0  
E=0  
CEO  
EBO  
I
E
C
I
CBO  
EBO  
V
V
E
-0.1  
-0.1  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=-1A, I  
B
B
=- 20mA  
=- 20mA  
-0.25 -0.5  
V
C
=-1A, I  
-1.2  
1200  
37  
h
FE  
V
V
V
CE= -6V, I  
C= -500mA  
400  
Collector Output Capacitance  
Transition frequency  
C
ob  
T
CE= -10V, I  
CE= -10V, I  
E
E
= 0,f=1MHz  
= 10mA  
pF  
f
90  
MHz  
Classification of hfe  
Type  
Range  
Marking  
2SA1369-G  
400-800  
GG  
2SA1369-H  
600-1200  
GH  
1
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