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2SA1365

更新时间： 2024-09-24 17:15:43

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2SA1365 数据手册

2SA1365

Rev.F Apr.-2017

DATA SHEET

描述 / Descriptions

SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.

特征 / Features

饱和压降小，直流电流增益高、线性好，集电极电流大，特征频率高。

Low collector to emitter saturation voltage, excellent linearity of DC forward current Gain, high

collector current, high gain band width product.

用途 / Applications

用于小型马达驱动、继电器及电源驱动。

Small type motor drive, relay drive, power supply.

内部等效电路 / Equivalent Circuit

引脚排列 / Pinning

PIN1：Base

PIN 2：Emitter

PIN 3：Collector

放大及印章代码 / h_FEClassifications & Marking

_FEClassifications

Symbol

h_FERange

150～300

250～500

400～800

Marking

HAE

HAF

HAG

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型号	品牌	获取价格	描述	数据表
2SA1365_10	ISAHAYA	获取价格	FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
2SA1365-12-1E	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1365-12-1F	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1365-12-1G	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1365AE	ISAHAYA	获取价格	Transistor
2SA1365AF	ISAHAYA	获取价格	Transistor
2SA1365AG	ISAHAYA	获取价格	Transistor
2SA1365G	ISAHAYA	获取价格	Transistor
2SA1365-T12-1E	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1366	ISAHAYA	获取价格	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE