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2SA1364_15 PDF预览

2SA1364_15

更新时间: 2024-11-13 01:07:47
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3页 1288K
描述
PNP Transistors

2SA1364_15 数据手册

 浏览型号2SA1364_15的Datasheet PDF文件第2页浏览型号2SA1364_15的Datasheet PDF文件第3页 
SMD Type  
Transistors  
PNP Transistors  
2SA1364  
1.70 0.1  
Features  
High Voltage VCEO = -60V  
High Collector Current (IC = -1A)  
High Collector Dissipation PC = 500mW  
Small Package For Mounting  
0.42 0.1  
0.46 0.1  
Complementary to 2SC3444  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
-60  
V
V
-60  
-6  
V
Collector Current  
-1  
-2  
A
Peak Collector Current  
Collector Power Dissipation  
Jumction temperature  
ICM  
A
PC  
500  
mW  
Tj  
150  
Storage temperature Range  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Test Conditions  
Ic= -100 μAI =0  
Ic= -2 mAI =0  
= -100μAI  
Min  
-60  
-60  
-6  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
V
V
V
CBO  
E
CEO  
EBO  
B
I
E
C
=0  
I
CBO  
EBO  
V
V
CB= -50 V , I  
E
=0  
-200  
-200  
nA  
V
I
EB= -4V , IC=0  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=-500mA, I  
B
B
=- 25mA  
=- 25mA  
-0.11 -0.3  
V
C=-500mA, I  
-1.2  
h
FE  
V
V
V
CE= -4V, I  
CB= -10V, I  
CE= -2V, I = 10mA  
C
= -100mA  
55  
300  
Collector output capacitance  
Transition frequency  
C
ob  
T
E
= 0,f=1MHz  
22  
85  
pF  
f
E
MHz  
Classification of hfe  
Type  
Range  
Marking  
2SA1364-C  
55-110  
CC  
2SA1364-D  
90-180  
CD  
2SA1364-E  
150-300  
CE  
1
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