Datasheet > 2SA1364-E

2SA1364-E

更新时间： 2024-11-13 01:07:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1288K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1364-E 数据手册

SMD Type

Transistors

PNP Transistors

2SA1364

1.70 0.1

Features

High Voltage VCEO = -60V

High Collector Current (IC = -1A)

High Collector Dissipation PC = 500mW

Small Package For Mounting

0.42 0.1

0.46 0.1

Complementary to 2SC3444

1.Base

2.Collector

3.Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-60

-6

Collector Current

-1

-2

Peak Collector Current

Collector Power Dissipation

Jumction temperature

I^CM

P^C

500

T^j

150

Storage temperature Range

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -2 mA， I =0

= -100μA， I

Min

-60

-6

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CBO

CEO

EBO

CBO

EBO

CB= -50 V , I

-200

EB= -4V , IC=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-500mA, I

=- 25mA

-0.11 -0.3

C=-500mA, I

-1.2

CE= -4V, I

CB= -10V, I

CE= -2V, I = 10mA

= -100mA

300

Collector output capacitance

Transition frequency

= 0,f=1MHz

MHz

■ Classification of hfe

Type

Range

Marking

2SA1364-C

55-110

2SA1364-D

90-180

2SA1364-E

150-300

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与2SA1364-E相关器件

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2SA1364-T13-1C	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SC-62, 3
2SA1364-T13-1D	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SC-62, 3
2SA1365	TYSEMI	获取价格	Low collector to emitter saturation voltage. High collector current.
2SA1365	ISAHAYA	获取价格	FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
2SA1365	KEXIN	获取价格	Silicon PNP Epitaxia
2SA1365	FOSHAN	获取价格	SOT-23
2SA1365_10	ISAHAYA	获取价格	FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
2SA1365-12-1E	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1365-12-1F	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1365-12-1G	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236