2SA1360

更新时间： 2024-11-22 06:17:19

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
4页	192K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SA1360 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1360

DESCRIPTION

·With TO-126 package

·Complement to type 2SC3423

·High transition frequency

APPLICATIONS

·Audio frequency amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

UNIT

-150

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

-150

Open collector

-5

-50

I_B

Base current

-5

1.2

T_a=25℃

T_C=25℃

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55～+150

12 3 4

中文翻译

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与2SA1360相关器件

型号	品牌	获取价格	描述	数据表
2SA1360_07	TOSHIBA	获取价格	Audio Frequency Amplifier Applications
2SA1360_10	TOSHIBA	获取价格	Audio Frequency Amplifier Applications
2SA1360-126	JMNIC	获取价格	Silicon PNP Power Transistors
2SA1360-126_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SA1360O	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1360Y	TOSHIBA	获取价格	Audio Frequency Amplifier Applications
2SA1360-Y	TOSHIBA	获取价格	TRANSISTOR 0.05 A, 150 V, PNP, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Po
2SA1360-Y(Q)	TOSHIBA	获取价格	2SA1360-Y(Q)
2SA1361	ETC	获取价格	2SA1361
2SA1362	TYSEMI	获取价格	High DC Current Gain Low Saturation Voltage Suitable for Driver Stage of Small Motor